Effect of silicates and electrical conductivity on Fusarium wilt of tomato grown soilless
2014
Chitarra, W. | Cogliati, E. | Pugliese, M. | Gilardi, G. | Gullino, M. L. | Garibaldi, A.
The effect of silicates on Fusarium wilt, caused by Fusarium oxysporum f. sp. lycopersici, was evaluated in four trials using 'Cuore di bue' tomato plants, grown soilless. Silicon, as potassium silicate, was added at 100 mg L-1 to the nutrient solution at three levels of electrical conductivity: 1.5-1.6 (EC1), 3.0-3.2 (EC2) and 4-4.2 mS cm-1 (EC3). Pots containing tomato plants were inoculated with F. oxysporum f. sp. lycopersici (3×105 clamydospores L-1) 15-20 days before transplanting. Tomato plants were grown on benches in a glasshouse (20-28°C), at a density of five plants m-2. Physiological parameters, including chlorophyll content, transpiration and assimilation rates, and disease index were analyzed every 7 days. The addition of potassium silicate reduced Fusarium wilt in all trials, and it was primarily adsorbed at the root level while a lower difference in silicon content was observed in the shoots. No significant effect to plants physiology was observed. The increase of electrical conductivity of the nutrient solution showed no effects on the disease and caused a decrease of fresh weight and a reduction of physiological parameters of tomato plants.
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