Effect of Strontium Incorporation on the p-Type Conductivity of Cu2O Thin Films Deposited by Metal–Organic Chemical Vapor Deposition
2016
Brochen, Stéphane | Bergerot, Laurent | Favre, Wilfried | Resende, João | Jiménez, Carmen | Deschanvres, Jean-Luc | Consonni, Vincent
Temperature-dependent Hall effect and resistivity measurements are performed on polycrystalline Cu₂O:Sr thin films deposited on glass substrate by metal organic-chemical vapor deposition. Their electrical properties are studied as a function of the strontium content, as determined by wavelength dispersive X-ray spectrometry. These electrical transport measurements highlight a copper vacancy doping mechanism induced by strontium incorporation, leading to a large decrease of the resistivity as low as 1.2 Ω·cm and corresponding free carrier mobilities about 15 cm²·V–¹·s–¹ at room temperature. Moreover, in addition to the main copper vacancy acceptor level, found at EA₁ = 278 ± 21 meV above the top of the valence band, a coexisting shallower acceptor level with an ionization energy of EA₂ = 133 ± 15 meV occurs for a strontium content above 5% and is tentatively assigned to a large size impurity–vacancy complex.
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