Assessment of silicon application on growth, yield and leaf spot incidence in ginger (Zingiber officinale Roscoe)
2024
Arellano, N.A.A.
A two-trial pot experiment using replant soil was conducted to determine the effect of silicon fertilization on ginger plant growth. The first trial was conducted wherein potassium silicate was side dressed to each plant at four different Si sub 2 rates (50, 100, 150 and 200 kg/ha). However, there is no significant difference observed between the unsterile soil-control and the silicon treated plants in terms of relative growth rate and other growth parameters. Thus, a second trial was conducted to verify these results, wherein potassium silicate was drenched at two SiO sub 2 concentrations (500 and 1000ppm). Plants under sterile soil control treatment showed significantly higher plant growth in terms of plant dry weight, leaf area, number of leaves and pseudo stems, plant height, pseudo stem girth, rhizome fresh weight and longest root length as compared to silicon treated plants. In terms of nutrient uptake 1000ppm SiO sub 2 treated plants showed significantly higher potassium uptake. In addition, this concentration reduced ginger leaf spot severity index by 44.83% as compared to plants under sterile soil treatment. These results showed that silicon has the potential to control ginger leaf spot disease. Further studies were recommended regarding the effect of silicon on ginger plant growth.
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