Direct formation of graphene layers on top of SiC during the carburization of Si substrate
2012
Cho, Seong-Yong | Kim, Hyun-Mi | Lee, Min-Hyun | Lee, Do-Joong | Kim, Ki-Bum
We grow graphene film on silicon substrates having various orientations by simple heating in the presence of carbon source gas. We observed that a 3C-SiC (111) film would form upon carburizing silicon with carbon deposited from a carbon source because it is well lattice-matched with Si (110) (less than 2%). Graphene grew on the buffer layer of 3C-SiC (111). The surface consists of hexagonal arrays that can act as a template for graphene growth. This simple and inexpensive method of forming graphene on silicon wafer in situ is compatible with silicon technology.
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