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Graphene–Boron Nitride–Graphene Cross-Point Memristors with Three Stable Resistive States

2019

Zhu, Kaichen | Liang, Xianhu | Yuan, Bin | Villena, Marco A. | Wen, Zhao | Wang, Tao | Chen, Shaochuan | Hui, Fei | Shi, Yuanyuan | Lanza, Mario


Bibliographic information
ACS applied materials & interfaces
Volume 11 Issue 41 Pagination 37999 - 38005 ISSN 1944-8252
Publisher
American Chemical Society
Other Subjects
Vapors; Memristor; Conductive filament; Energy use and consumption; 2d materials; Boron nitride; Hexagonal boron nitride; Strength (mechanics); Multistate
Language
English
Type
Text; Journal Article

2024-02-27
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