Thermoelectric properties of the Bi-doped Mg₂Si system
2011
Choi, Soon-Mok | Kim, Kyung-Ho | Kim, Il-Ho | Kim, Sun-Uk | Seo, Won-Seon
Thermoelectric elements of Bi-added Mg₂Si compounds were fabricated in a vacuum melting method followed by a Spark Plasma Sintering (SPS) process. The electrical conductivity, the Seebeck coefficient, and thermal conductivity between 300 and 900 K were measured to evaluate the thermoelectric properties of Mg₂Si. All of the stoichiometric and Bi-added Mg₂Si samples exhibited n-type behavior throughout the temperature range. Their thermoelectric properties were improved with up to 2 at% addition Bi. The maximum value of the dimensionless figure of merit, ZT, was 0.74 with a specimen with 2 at% of Bi added at 840 K.
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