SiO₂ thin film growth through a pure atomic layer deposition technique at room temperature
2020
Arl, D. | Rogé, V. | Adjeroud, N. | Pistillo, B. R. | Sarr, M. | Bahlawane, N. | Lenoble, D.
In this study, less contaminated and porous SiO₂ films were grown via ALD at room temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of the reaction was demonstrated by tuning the exposure of SiCl₄, NH₃ and H₂O. This pure ALD approach generated porous oxide layers with very low chloride contamination in films. This optimized RT-ALD process could be applied to a wide range of substrates that need to be 3D-coated, similar to mesoporous structured membranes.
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