Metal-Insulator-like transition in the LaAlO₃/BaTiO₃ interface
2011
Chae, S.C. | Choi, W.S. | Yoo, H.K. | Kang, B.S.
We report on the electronic properties of LaAlO₃/BaTiO₃ oxide interfaces. We used pulsed laser deposition to fabricate high quality oxide interfaces between LaAlO₃ and BaTiO₃ by varying the oxygen partial pressure from 10⁻⁶ to 10⁻⁴ Torr during the deposition. As the oxygen partial pressure increased, the interface changed from a metal to an insulator. Furthermore, the LaAlO₃/BaTiO₃ interface fabricated at low oxygen partial pressure showed a temperature-dependent metal-insulator-like transition above room temperature. The metal-insulator-like transition at LaAlO₃/BaTiO₃ interface seems to be originating from the enhanced electronic carrier concentration due to the ferroelectric transition of BaTiO₃ thin film in cooperation with the oxygen vacancy in BaTiO₃ layer.
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