Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device
2018
Ge, Shuaipeng | Wang, Yuhang | Xiang, Zhongcheng | Cui, Yimin
All-inorganic CsPb₁–ₓBiₓI₃ perovskite film was successfully fabricated by incorporating Bi³⁺ in CsPbI₃ to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb₁–ₓBiₓI₃/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb₁–ₓBiₓI₃/ITO device potential application for multilevel data storage in a nonvolatile memory device.
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