Optimization of the electrical parameters of silicon heterojunction solar cells
2013
Zneliyazova, Veliyana (Faculty of Electrical Engineering and Automation, Ruse (Bulgaria). Department of Electronics) | Shtereva, Krasimira (Faculty of Electrical Engineering and Automation, Ruse (Bulgaria). Department of Electronics)
We used the AFORS-HET simulation program for hetero-junction solar cells modeling to determine how the thickness and material properties of the n-, i-, and p-layers affect the electrical parameters and the device performance. Simulation studies have been carried out on hetero-junction (HJ) amorphous silicon (a-Si)/crystalline silicon (c-Si) solar cells and hetero-junction solar cells with intrinsic thin layer (HIT). The obtained maximum solar energy conversion efficiency is 22.68% for a-Si (n)/a-Si(i)/c- Si(p)/a-Si(p+) solar cells with a back surface field (BSF) contact on a p-type silicon wafer. The open-circuit voltage (VOC) (728.3 mV), short circuit current density (JSC) (37.96 mA-cm-2), and the fill factor (FF) (82.06%) of the solar cells are improved by introducing thin layers of intrinsic and doped amorphous hydrogenated silicon, deposited on crystalline silicon, and by optimizing the thickness of the layers. Potential for achieving conversion efficiencies over 20% and current densities higher than 35 mA▪cm-2 are demonstrated.
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