Enhancing Perovskite Solar Cell Performance by Interface Engineering Using CH3NH3PbBr0.9I2.1 Quantum Dots
2016
Cha, Mingyang | Da, Peimei | Wang, Jun | Wang, Weiyi | Chen, Zhanghai | Xiu, Faxian | Zheng, G. (Gengfeng) | Wang, Zhong-Sheng
To improve the interfacial charge transfer that is crucial to the performance of perovskite solar cells, the interface engineering in a device should be rationally designed. Here we have developed an interface engineering method to tune the photovoltaic performance of planar-heterojunction perovskite solar cells by incorporating MAPbBr₃–ₓIₓ (MA = CH₃NH₃) quantum dots (QDs) between the MAPbI₃ perovskite film and the hole-transporting material (HTM) layer. By adjustment of the Br:I ratio, the as-synthesized MAPbBr₃–ₓIₓ QDs show tunable fluorescence and band edge positions. When the valence band (VB) edge of MAPbBr₃–ₓIₓ QDs is located below that of the MAPbI₃ perovskite, the hole transfer from the MAPbI₃ perovskite film to the HTM layer is hindered, and hence, the power conversion efficiency decreases. In contrast, when the VB edge of MAPbBr₃–ₓIₓ QDs is located between the VB edge of the MAPbI₃ perovskite film and the highest occupied molecular orbital of the HTM layer, the hole transfer from the MAPbI₃ perovskite film to the HTM layer is well-facilitated, resulting in significant improvements in the fill factor, short-circuit photocurrent, and power conversion efficiency.
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