Extending growth inhibition during area-selective atomic layer deposition of Al₂O₃ on aminosilane-functionalized SiO₂
2022
Xu, Wanxing | Lemaire, Paul C. | Sharma, Kashish | Hausmann, Dennis M. | Agarwal, Sumit
During area-selective atomic layer deposition (ALD) based on growth inhibitors, nucleation eventually occurs as the metal precursor reacts with the surface through secondary pathways. We show that ALD of Al₂O₃ on functionalized SiO₂ can be significantly delayed by using a lower reactivity, heteroleptic precursor at well below the saturation dose.
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