Crystallization behavior of bulk amorphous Se-Sb-In system
2001
Kaur, G. | Komatsu, T.
In the present work crystallization behavior of the amorphous Se₉₀₋ₓ Sb₁₀In ₓ (0 ≤ x ≤ 15) system has been investigated using Differential Scanning Calorimetry (DSC). The DSC data was taken at different heating rates varying from 1°C/min to 90°C/min. From the heating rate dependence of the crystallization temperature, the activation energy for crystallization has been determined using the Kissinger equation and Matusitas equation for non-isothermal crystallization of materials. The effect of addition of In to the Se-Sb system on the dimensionality of crystal growth has been investigated.
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