Synthese und Hochdruckverhalten quaternärer Chalkogenidhalogenide M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = CI, Br, I) / Synthesis and High-Pressure Behaviour of Quaternary Chalcogenide Halides M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = Cl, Br, I)

Range, Klaus-Jürgen; Handrick, Karin

Synthese und Hochdruckverhalten quaternärer Chalkogenidhalogenide M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = CI, Br, I) / Synthesis and High-Pressure Behaviour of Quaternary Chalcogenide Halides M2M′X3Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = Cl, Br, I)

2014

Range, Klaus-Jürgen | Handrick, Karin

Quaternary chalcogenide halides M₂M′X₃Y (M = Zn, Cd; M′ = Al, Ga, In; X = Se, Te; Y = Cl, Br, I) can be synthesized by heating stoichiometric amounts of the binary components MX. MY₂, and M′₂X₃ in evacuated sealed quartz ampoules. In the case of aluminium and gallium compounds, a mixture of the M′ and X elements rather than the binary compounds has been used. The products are typical tetrahedral compounds, crystallizing with either the defect wurtzite-type or the defect zinc-blende-type structure. At 25 kbar, and 1400 °C, Cd₂InSe₃Cl, Cd₂InSe₃Br, and Cd₂InSe₃I transform from the defect wurtzite-type structure to quenchable high-pressure phases with defect NaCl-type structure. The retransformation to the ambient-pressure phases proceeds via intermediates having the defect zinc-blende-type structure. Some aspects of the apparent non-stoichiometry in the high-pressure phases are discussed

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