Synthesis and photoluminescence of doped Si3N4 nanowires with various valence electron configurations
2018
Huang, Zhifeng | Wang, Zhihao | Yuan, Hailong | Zhang, Jianwen | Chen, Fei | Shen, Qiang | Zhang, Lianmeng
In this work, Y-, Ce- and Tb-doped Si₃N₄ nanowires have been successfully synthesized by directly nitriding-doped nanocrystalline silicon powders obtained by cryomilling. The obtained single-crystalline α-Si₃N₄ nanowires are nearly 20–50 nm in diameter and up to several micrometers in length. The photoluminescence properties of doped Si₃N₄ nanowires have also been investigated. The Y-doped Si₃N₄ nanowires exhibit the main peak at 425 nm, Ce-doped Si₃N₄ nanowires show a narrow emission peak at 450 nm, and Tb-doped Si₃N₄ nanowires present a strong and sharp emission peak at 545 nm. Combining with our previous works on Al-, La- and Eu-doped Si₃N₄ nanowires, the effects of dopants with different valence electron configurations on the photoluminescence properties have been explored. The present study provides a guide to fabricate Si₃N₄-based nanomaterials for different photonic applications.
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