A first principles study of H₂S adsorption and decomposition on a Ge(100) surface
2014
Teng, Tsung-Fan | Nachimuthu, Santhanamoorthi | Hung, Wei-Hsiu | Jiang, Jyh-Chiang
We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H₂S on a Ge(100) surface. There are four reaction paths proposed for the decomposition of adsorbed H₂S on a Ge(100) surface and the corresponding structural conformations are studied extensively. The present study shows two new possible products and a detailed reaction mechanism for H₂S adsorption on a Ge(100) surface and the results are compared with our previous study of H₂S adsorption on a Si(100) surface (J. Phy. Chem. C, 115, 2011, 19203). The density of states (DOS) and electron density difference (EDD) analyses are used to illustrate the interaction between S-containing species and surface Ge atoms.
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