Thermal and Plasma-Enhanced Atomic Layer Deposition of Yttrium Oxide Films and the Properties of Water Wettability
2019
Zhao, Bo | Mattelaer, Felix | Rampelberg, Geert | Dendooven, Jolien | Detavernier, Christophe
The atomic layer deposition (ALD) of yttrium oxide (Y₂O₃) is investigated using the liquid precursor Y(EtCp)₂(iPr-amd) as the yttrium source with thermal (H₂O) and plasma-enhanced (H₂O plasma and O₂ plasma) processes, respectively. Saturation is confirmed for the growth of the Y₂O₃ films with each investigated reactant with a similar ALD window from 150 to 300 °C, albeit with a different growth rate. All of the as-deposited Y₂O₃ films are pure and smooth and have a polycrystalline cubic structure. The as-deposited Y₂O₃ films are hydrophobic with water contact angles >90°. The water contact angle gradually increased and the surface free energy gradually decreased as the film thickness increased, reaching a saturated value at a Y₂O₃ film thickness of ∼20 nm. The hydrophobicity was retained during post-ALD annealed at 500 °C in static air for 2 h. Exposure to polar and nonpolar solvents influences the Y₂O₃ water contact angle. The reported ALD process for Y₂O₃ films may find potential applications in the field of hydrophobic coatings.
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