High-performance ReS₂ photodetectors enhanced by a ferroelectric field and strain field
2022
Tai, Xiaochi | Chen, Yan | Wu, Shuaiqin | Jiao, Hanxue | Cui, Zhuangzhuang | Zhao, Dongyang | Huang, Xinning | Zhao, Qianru | Wang, Xudong | Lin, Tie | Shen, Hong | Meng, Xiangjian | Wang, Jianlu | Chu, Junhao
Flexible optoelectronic devices have numerous applications in personal wearable devices, bionic detectors, and other systems. There is an urgent need for functional materials with appealing electrical and optoelectronic properties, stretchable electrodes with outstanding mechanical flexibility, and gate medium with flexibility and low power consumption. Two-dimensional transition metal dichalcogenides (TMDCs), a novel kind of widely studied optoelectrical material, have good flexibility for their ultrathin nature. P(VDF-TrFE) is a kind of organic material with good flexibility which has been proved to be a well-performing ferroelectric gate material for photodetectors. Herein, we directly fabricated a well-performing photodetector based on ReS₂ and P(VDF-TrFE) on a flexible substrate. The device achieved a high responsivity of 11.3 A W⁻¹ and a high detectivity of 1.7 × 10¹⁰ Jones from visible to near-infrared. Moreover, with strain modulation, the device's responsivity improved 2.6 times, while the detectivity improved 1.8 times. This research provides a prospect of flexible photodetectors in the near-infrared wavelength.
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