[The rapid potato propagation on ion-exchange substrates with different rates of succinic acid]
2008
Semenova, Z.A., National Academy of Sciences of Belarus, Minsk (Belarus). Scientific and Practical Center for Potato, Vegetable and Fruit Growing
Variants of artificial ion-exchange substrates for potato plants containing different rates of succinic acid were evaluated. The influence of succinic acid (more than 100 mg/l) in structure of ion-exchange substrates was similar to the effect of retardants – slows down the growth of seedlings in height. The most perspective variants of substrates providing high yield of plants on the stage of first tuber generation were recorded. Reception of dwarf seedlings with good biomass gives the chance to avoid of traumatizing of quickly growing early varieties at replant in an hothouse and provides 100 % of survival. Efficiency of the plants received on ion-exchange substrates is in 1,4-1,6 times above control in vitro plants. Skilled plants surpass control ones in weight of tubers and is insignificant by quantity of tubers on a plant. An essential difference in efficiency skilled and control on Bion-312 without amber acid it is not observed. Thus, along with universal ion-exchange substrates Bion-312, for quickly growing early group of varieties of potato it is possible to use ion-exchange substrates containing succinic acid, allowing to receive the dwarf seedlings
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