Atomic layer deposition of Zn1−x Mg x O:Al transparent conducting films
2014
Luka, G. | Witkowski, B. S. | Wachnicki, L. | Goscinski, K. | Jakiela, R. | Guziewicz, E. | Godlewski, M. | Zielony, E. | Bieganski, P. | Placzek-Popko, E. | Lisowski, W. | Sobczak, J. W. | Jablonski, A.
Aluminum-doped zinc magnesium oxide (Zn₁₋ₓ Mg ₓ O:Al) films with the Mg content from x = 0 to 0.48 were obtained using atomic layer deposition (ALD). Together with the thorough studies of the properties of the deposited films, the ALD growth parameters conditioning possible applications of Zn₁₋ₓ Mg ₓ O:Al films as transparent electrodes are investigated. Very low film resistivities (≤~10⁻³ Ω cm) and the metallic-type conductivity behavior at room temperature for Zn₁₋ₓ Mg ₓ O:Al films are observed for Mg content x < 0.19. The Mg content of x = 0.19 results in the optical absorption edge of Zn₁₋ₓ Mg ₓ O:Al films at 3.81 eV (325 nm). Other film parameters like work function or sheet resistance can be easily modified by variation of growth parameters.
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