Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films
2016
Nistor, M. | Mihut, L. | Millon, E. | Cachoncinlle, C. | Hebert, C. | Perrière, J.
Nd-doped ZnO films with highly tunable properties were grown by pulsed electron beam deposition at 500 °C on Si and c-cut single crystal substrates under oxygen gas. The effects of a slight change in the oxygen pressure (10⁻² to 2 × 10⁻² mbar) on the composition, structure and physical properties of the films were studied. Films grown at 10⁻² mbar present a low resistivity (5 × 10⁻³ Ω cm) and high transparency in visible range and do not show any near-infrared emission due to Nd³⁺ ions. On the contrary, films grown at 2 × 10⁻² mbar have high resistivity (>16 Ω cm), high optical transparency and near infrared emission of the Nd³⁺ ions is observed under indirect excitation at 335 nm (i.e. absorption by the ZnO matrix and transfer to Nd³⁺ ions). These significant changes in physical properties, leading from transparent conducting oxide to photon down-shifting thin films, are related to growth mode in pulsed-electron beam deposition.
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