Enhanced Thermoelectric Performance in Lead-Free Inorganic CsSn₁–ₓGeₓI₃ Perovskite Semiconductors
2020
Qian, Feng | Hu, Mingyu | Gong, Jue | Ge, Chunyu | Zhou, Yunxuan | Guo, Jun | Chen, Min | Ge, Zhenhua | Padture, Nitin P. | Zhou, Yuanyuan | Feng, Jing
Halide perovskite semiconductors exhibit ultralow thermal conductivities, making them potentially suitable for thermoelectric applications. Nevertheless, the thermoelectric properties of the prototypical halide perovskite of CH₃NH₃PbI₃ have been limited with a very low dimensionless figure of merit (ZT) and a narrow operating temperature window, which are attributed to its poor electronic conductivity and unstable hybrid organic–inorganic composition, respectively. Here, we report the bulk synthesis of a stable, all-inorganic halide perovskite of CsSn₀.₈Ge₀.₂I₃ as a new thermoelectric material, which shows a 10 order of magnitude enhancement in ZT compared with that of CH₃NH₃PbI₃ and an operating temperature as high as 473 K. Importantly, this CsSn₀.₈Ge₀.₂I₃ perovskite is also Pb-free in the composition, attesting its high potential as an environmentally friendly candidate material for future thermoelectrics.
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