Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application
2012
Small molecules with different film-forming properties and electron traps were synthesized and characterized in the meantime. An electrical memory device with the indium-tin-oxide (ITO)/Small-Molecule/Al sandwich structure was fabricated and its electrical performance was investigated. WORM storage devices with different threshold voltages were obtained, some of which present “ternary” property. The relationship between turn-on voltage and the energy barrier between active materials and electrodes was revealed by the cyclic voltammetry measurement. The molecular film-forming properties and electron traps are responsible for device performances collectively, which could be elucidated unambiguously from UV–vis absorption spectra and X-ray diffraction patterns.
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Эту запись предоставил National Agricultural Library