Influence of Al-doping on electroluminescence of silicon-based films
2001
Xuemei, Wu | Chunnuan, Ye | Lanjian, Zhuge | Yemin, Dong | Naiyun, Tang | Yuehui, Yu | Zhaoyuan, Ning | Weiguo, Yao
A series of Al-doped silicon-rich silica (AlSiO) composite films have been prepared by a dual ion beam co-sputtering method with a Al, Si and SiO₂ composite target. The content of Al and Si in the films can be adjusted by changing the surface area of Al and Si of the target. Visible electroluminescence (EL) from the samples is found to have only one luminescence band peaked at 510 nm (2.4 eV). Experimental results show that the doping of Al is beneficial to reducing the onset voltage and to increasing the intensity of EL.
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