Anisotropic magnetoresistance and nonvolatile memory in superlattices of La2/3Sr1/3MnO3 and antiferromagnet Sr2IrO4
2020
Xu, Hui | Huang, Haoliang | Wu, Qingmei | Wang, Zhicheng | Cui, Zhangzhang | Zhai, Xiaofang | Wang, Jianlin | Fu, Zhengping | Lu, Yalin
Antiferromagnets have attracted considerable interest in the field of spintronics due to their attractive characteristics such as ultrafast spin dynamics and robustness against external magnetic field perturbations. Sr₂IrO₄ is a rare example of antiferromagnetic semiconductor oxide and has been extensively studied in anisotropic magnetoresistance-based spintronics. However, the anisotropic magnetoresistance of Sr₂IrO₄ films is usually very small. Herein, we have prepared a (Sr₂IrO₄)₄/(La₂/₃Sr₁/₃MnO₃)₅ superlattice which shows an enhanced anisotropic magnetoresistance compared to Sr₂IrO₄ film or La₂/₃Sr₁/₃MnO₃/Sr₂IrO₄ heterostructure and an obvious nonvolatile memory effect that is comparable to Sr₂IrO₄ single crystals. Through magnetic measurements, the increased coercivity and the exchange bias at low temperatures reveal the interfacial magnetic coupling between Sr₂IrO₄ and La₂/₃Sr₁/₃MnO₃. Additionally, the remarkable anisotropic magnetoresistance and clear hysteresis of anisotropic magnetoresistance with distinct fourfold symmetry can be controlled by temperature and magnetic field. These findings demonstrate that the superlattices of heavy transition metal oxide Sr₂IrO₄ are excellent platforms for antiferromagnetic spintronics.
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