Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments
2014
Khan, M. F. | Iqbal, M. W. | Iqbal, M. Z. | Shehzad, M. A. | Seo, Y. | Eom, Jonghwa
Molybdenum disulfide (MoS₂), which is one of the representative transition metal dichalcogenides, can be made as an atomically thin layer while preserving its semiconducting characteristics. We fabricated single-, bi-, and multilayer MoS₂ field-effect transistor (FET) by the mechanical exfoliation method and studied the effect of deep ultraviolet (DUV) light illumination. The thickness of the MoS₂ layers was determined using an optical microscope and further confirmed by Raman spectroscopy and atomic force microscopy. The MoS₂ FETs with different number of layers were assessed for DUV-sensitive performances in various environments. The photocurrent response to DUV light becomes larger with increasing numbers of MoS₂ layers and is significantly enhanced in N₂ gas environment compared with that in atmospheric environment.
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