Effect of silicon on photosynthesis and its related physiological parameters in two winter wheat cultivars under cold stress

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英语. The objectives of this study were to gain better insight into the biological mechanisms of silicon-enhancement of cold tolerance in wheat. Hydroponic experiments were performed to investigate the effects of exogenous silicon (Si) on the changes in photosynthetic and physiological parameters in two winter wheat (Tritium aestivum L.) cultivars, Linmai 2 (resistant) and Yangmai 5 (susceptible), under cold stress. Wheat seedlings were treated with 0, 0.1or 1.0 mmolL-1 Si, and were then subjected to cold stress. Exogenous Si increased shoot Si content of both wheat cultivars with Si content being higher in Linmai 2 than in Yangmai 5. The leaf photosynthesis was significantly inhibited under cold stress, but significantly enhanced by added Si. In comparison with the control, cold stress induced a decline in net photosynthetic rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), stomatal limitation value (Ls) and water utiliy efficiency (WUE) in seedlings. However, exogenous Si significantly increased the Pn, Gs and Tr. The transpiration rate was decreased under cold stress and even lower in Si-supplied cold treatment than in the Si-untreated one. The content of chlorophyll, the ratios of Chl a/Chl b and the content of soluble sugar were decreased under cold stress. Exogenous Si decreased the content of soluble sugar significantly in both cultivars, whereas it did not significantly increase the contents of chlorophyll or the ratios of Chl a/Chl b. The higher shoot Si content in the cold-resistant cultivar treated with Si can partly explain why the cold-resistant cultivar is more resistant than the cold-susceptible cultivar under cold stress.