Fabrication of Cu2ZnSn(S,Se)4 Solar Cells via an Ethanol-Based Sol–Gel Route Using SnS2 as Sn Source
2014
Zhao, Wangen | Wang, Gang | Tian, Qingwen | Yang, Yanchun | Tianhang, | Pan, Daocheng
Cu₂ZnSn(S,Se)₄ semiconductor is a promising absorber layer material in thin film solar cells due to its own virtues. In this work, high quality Cu₂ZnSn(S,Se)₄ thin films have been successfully fabricated by an ethanol-based sol–gel approach. Different from those conventional sol–gel approaches, SnS₂ was used as the tin source to replace the most commonly used SnCl₂ in order to avoid the possible chlorine contamination. In addition, sodium was found to improve the short-circuit current and fill factor rather than the open-circuit voltage due to the decrease of the thickness of small-grained layer. The selenized Cu₂ZnSn(S,Se)₄ thin films showed large densely packed grains and smooth surface morphology, and a power conversion efficiency of 6.52% has been realized for Cu₂ZnSn(S,Se)₄ thin film solar cell without antireflective coating.
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