Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells
2015
Zhou, Nanjia | Kim, Myung-Gil | Loser, Stephen | Smith, Jeremy | Yoshida, Hiroyuki | Guo, Xugang | Song, Charles | Jin, Hosub | Chen, Zhihua | Yoon, Seok Min | Freeman, Arthur J. | Chang, Robert P. H. | Facchetti, Antonio | Marks, Tobin J.
In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.
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