Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO4 ceramics
2007
Pang, Yue | Zhong, Chaowei | Zhang, Shuren
Gd³⁺ was chosen as a substitute for Bi³⁺ in BiNbO₄ ceramics, and the substitution effects on the sintering performance and microwave dielectric properties were studied in this paper. The high temperature triclinic phase was observed only in the Bi₀.₉₈Gd₀.₀₂NbO₄ ceramics when sintered at 920 °C. Both bulk densities and dielectric constant (εᵣ) increased with the sintering temperature, while decreased with the Gd content. The quality factor (Q) exhibited a correlation to the Gd content and the microstructures of Bi₁₋ₓGdₓNbO₄ ceramics. At the sintering temperature of 900 °C, Bi₀.₉₉₂Gd₀.₀₀₈NbO₄ ceramics exhibited microwave dielectric properties of εᵣ ∼ 43.87, Q × f ∼ 16,852 GHz (at 4.3 GHz), and its temperature coefficient of resonant frequency (τf) was found to be near-to-zero.
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