Elucidating the Surface Reaction Mechanisms During Atomic Layer Deposition of LixAlySizO by in Situ Fourier Transform Infrared Spectroscopy
2016
Cho, Jea | Kim, Taeseung | Seegmiller, Trevor | Chang, Jane P.
Reaction mechanisms in the atomic layer deposition (ALD) of LiₓAlySizO (LASO) using a LiOC(CH₃)₃/H₂O–Al(CH₃)₃/H₂O–Si(OCH₂CH₃)₄/H₂O chemistry were studied via in situ Fourier transform infrared spectroscopy (FTIR) at 225 °C. ALD deposition of Al₂O₃ using an Al(CH₃)₃/H₂O chemistry and LiOH using a LiOC(CH₃)₃/H₂O chemistry demonstrated ideal ALD growth. ALD deposition of SiO₂ alone by Si(OCH₂CH₃)₄/H₂O chemistry was unsuccessful; however, incorporation of the same Si(OCH₂CH₃)₄/H₂O chemistry in between ALD processes of Al₂O₃ and LiOH resulted in ALD deposition of LiₓAlySizO. The as-deposited ALD LASO film with a composition of Li₀.₄₀Al₀.₃₂Si₀.₂₈O on a Si(100) substrate was amorphous but crystallized into β-LiAlSiO₄ upon rapid thermal annealing (RTA) at 900 °C under N₂. The ionic conductivity of as-deposited, amorphous ALD Li₀.₄₀Al₀.₃₂Si₀.₂₈O was as high as 1.62 × 10–⁶ S/cm at 361 °C with an activation energy of Eₐ = 0.70 eV.
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