Transfer-free growth of graphene on SiO₂ insulator substrate from sputtered carbon and nickel films
2013
Pan, Genhua | Li, Bing | Heath, Mark | Horsell, David | Wears, M Lesley | Al Taan, Laith | Awan, Shakil
Here we demonstrate the growth of transfer-free graphene on SiO₂ insulator substrates from sputtered carbon and metal layers with rapid thermal processing in the same evacuation. It was found that graphene always grows atop the stack and in close contact with the Ni. Raman spectra typical of high quality exfoliated monolayer graphene were obtained for samples under optimised conditions with monolayer surface coverage of up to 40% and overall graphene surface coverage of over 90%. Transfer-free graphene is produced on SiO₂ substrates with the removal of Ni in acid when Ni thickness is below 100nm, which effectively eliminates the need to transfer graphene from metal to insulator substrates and paves the way to mass production of graphene directly on insulator substrates. The characteristics of Raman spectrum depend on the size of Ni grains, which in turn depend on the thickness of Ni, layer deposition sequence of the stack and RTP temperature. The mechanism of the transfer-free growth process was studied by AFM in combination with Raman. A model is proposed to depict the graphene growth process. Results also suggest a monolayer self-limiting growth for graphene on individual Ni grains.
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