Limiting factors on the semiconductor structure of III–V multijunction solar cells for ultra-high concentration (1000–5000 suns)

Ochoa Gómez, Mario; Barrigón Montañés, Enrique; Barrutia Poncela, Laura; García Vara, Iván; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos

Limiting factors on the semiconductor structure of III–V multijunction solar cells for ultra-high concentration (1000–5000 suns)

2016

The main limiting factors of multijunction solar cells operating under ultra-high concentration (>1000 suns) are examined by means of 2D physically based numerical modelling. The validation of the model is carried out by fitting calibrated light concentration measurements. Because the series resistance is the most important constraint in the electrical performance of the solar cell under ultra-high irradiance, it is analysed and quantified detailing different contributions such as: (i) the electrical properties of the emitter; (ii) window layer of the top cell; and (iii) the band discontinuities formed at heterojunctions. We found the role of window layer to be important at very high concentrations (above 700 suns), while at ultra-high concentrations, (above 1000 suns) a gain in efficiency (~ 1% absolute) can be obtained by a proper structural design of the window layer. In the case of the heterojunctions included in the multijunction solar cell, the impact of a high-band offset can be mitigated by increasing the doping level density thus favouring the tunnelling effect. Moreover, the influence of different recombination mechanisms and high-injection effects at ultra-high irradiance is discussed. Finally, an optimisation of the complete solar cell taking into account the ohmic contacts to work under ultra-high irradiances (from 1000 to 5000 suns) is presented as well as the implications on the use of ultra-high irradiance in different multijunction solar cell architectures.

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