Formarea peliculelor de oxizi pe suprafaţa siliciului cu aplicarea plasmei descărcărilor electrice în impuls de acţiune indirectă
2015
Topală, P. | Melnic, V. | Guzgan, D.
Oxidation of semiconductor surface by means of electrical discharges in impulse in air has been realized under normal conditions. It is shown that the morphology of oxide films depends on the processing power. The quantity of oxygen absorbed by semiconductor surface depends on discharge frequency and number of discharges.
اظهر المزيد [+] اقل [-]الكلمات المفتاحية الخاصة بالمكنز الزراعي (أجروفوك)
المعلومات البيبليوغرافية
تم تزويد هذا السجل من قبل Technical University of Moldova