Formarea peliculelor de oxizi pe suprafaţa siliciului cu aplicarea plasmei descărcărilor electrice în impuls de acţiune indirectă
2015
Topală, P. | Melnic, V. | Guzgan, D.
Oxidation of semiconductor surface by means of electrical discharges in impulse in air has been realized under normal conditions. It is shown that the morphology of oxide films depends on the processing power. The quantity of oxygen absorbed by semiconductor surface depends on discharge frequency and number of discharges.
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书目信息
出版者
State Agrarian University of Moldova
页码
249-252
语言
罗马尼亚语； 摩尔多瓦语； 摩尔多瓦
ISBN
978-9975-64-276-7
类型
Conference Paper; Conference Part; Conference Proceedings
2022-12-15
AGRIS AP