Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic  Layer Deposition

Golnaz Karbasian; Michael S. McConnell; Hubert George; Louisa C. Schneider; Matthew J. Filmer; Alexei O. Orlov; Alexei N. Nazarov; Gregory L. Snider

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

2017

Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

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