Solution-processed Cu₂SnS₃ thin film solar cells
2016
Li, Jianmin | Huang, Jianliu | Zhang, Yan | Wang, Yaguang | Xue, Cong | Jiang, Guoshun | Liu, Weifeng | Zhu, Changfei
Cu₂SnS₃ as a promising candidate for the next generation of thin film solar cells still lacks of further understanding and study. In the present study, a simple solution method is described to fabricate monoclinic Cu₂SnS₃ thin films and their solar devices. With the utilization of a S + SnS mixture as an annealing atmosphere, we are able to tune the carrier concentration by over 2 orders of magnitude and achieve films with p-type doping of less than 10¹⁶ cm⁻³. For comparison, pure S and the S + Sn mixture are also listed. Cu₂SnS₃ thin films annealed with S + SnS mixture show good crystallinity, uniform surface potential and less surface defects, as well as good performance in the final solar device. The present findings may also provide significant insight in the design of efficient Cu₂SnS₃ based solar devices based on these advantages.
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